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“Inside out” growth method for high-quality nitrogen-doped graphene

Fiori S.
•
Perilli D.
•
Panighel M.
altro
Africh C.
2021
  • journal article

Periodico
CARBON
Abstract
High-quality nitrogen-doped graphene on nickel is prepared by exploiting both the catalytic properties of nickel and the solubility of nitrogen atoms into its bulk. Following the standard chemical vapor deposition procedure, a previously nitrogen-doped nickel substrate is exposed to carbon-containing precursors so that nitrogen atoms, segregating to the surface, remain trapped in the growing graphene network. Morphological and chemical characterization by scanning tunneling microscopy and X-ray photoelectron spectroscopy demonstrates that the process yields a flat, wide, continuous nitrogen-doped graphene layer. Experimental results are combined with a thorough density functional theory investigation of possible structural models, to obtain a clear description at the atomic scale of the various configurations of the nitrogen atoms observed in the graphene mesh. This growth method is potentially scalable and suitable for the production of high-performance nano-devices with well-defined nitrogen centers, to be exploited as metal-free carbon-based catalysts in several applicative fields such as electrochemistry, energy storage, gas storage/sensing or wastewater treatment.
DOI
10.1016/j.carbon.2020.09.056
WOS
WOS:000598371500074
Archivio
http://hdl.handle.net/11368/2973873
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85091914069
https://www.sciencedirect.com/science/article/pii/S0008622320309155?via=ihub
Diritti
closed access
license:copyright editore
FVG url
https://arts.units.it/request-item?handle=11368/2973873
Soggetti
  • Chemical vapor deposi...

  • Defect

  • Doping

  • Graphene

  • Nitrogen

Web of Science© citazioni
16
Data di acquisizione
Mar 24, 2024
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