A natural application of the emerging technique of photoemission microscopy to the study of semiconductor
interfaces involves measuring a device in cross section to directly determine heterojunction
parameters. We present here results on p{n GaAs homojunctions, which served as a prototype
system to demonstrate the applicability of this technique to buried semiconductor interfaces. We
also describe preliminary measurements of the electrostatic potential prole across Al/GaAs Schottky
junctions.
