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Phonon Limited Uniform Transport in Bilayer Graphene Transistors

PAUSSA, Alan
•
BRESCIANI, Marco
•
ESSENI, David
altro
SELMI, Luca
2011
  • conference object

Abstract
We report modeling results for low-field mobility and velocity saturation in bilayer graphene based on a newly developed semiclassical transport Monte-Carlo simulator validated by comparison with momentum relaxation time (MRT) calculations. We show that remote phonons originating in the dielectric stack are expected to strongly affect the mobility, although assessing their actual influence at high inversion charge requires the development of an accurate model for dynamic screening. When the applied bias opens the energy gap, the mobility is significantly reduced. The saturation velocity is expected to be as high as 3×107 cm/s and less degraded than mobility by bandgap opening.
DOI
10.1109/ESSDERC.2011.6044173
Archivio
http://hdl.handle.net/11390/882748
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-82955225206
Diritti
closed access
Scopus© citazioni
1
Data di acquisizione
Jun 14, 2022
Vedi dettagli
google-scholar
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