A conventional Monte-Carlo simulator has been extended to include electrostatic and transport effects that are most relevant for the analysis of nano-scale MOSFETs with either bulk or single and double gate SOI architecture and silicon film thickness down to approximately 10nm. Corrections to the self-consistent electrostatic potential and a new model for the surface roughness scattering have been included. The effectiveness of the approach has been tested simulating carrier transport in a 25nm double gate SOI MOSFET.
