We present a simple and efficient approach to implement Schottky barrier contacts in a Multi-subband
Monte Carlo simulator by using the subband smoothening technique to mimic tunneling at the Schottky
junction. In the absence of scattering, simulation results for Schottky barrier MOSFETs are in agreement
with ballistic Non-Equilibrium Green’s Functions calculations. We then include the most relevant scattering
mechanisms, and apply the model to the study of double gate Schottky barrier MOSFETs representative
of the ITRS 2015 high performance device. Results show that a Schottky barrier height of less than
approximately 0.15 eV is required to outperform the doped source/drain structure.
