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Modelling and Design of Short Channel Ferroelectric FETs with a Metal Interlayer Easing the Multilevel Operation

Rossi, Chiara
•
Lizzit, Daniel
•
Esseni, David
2025
  • conference object

Abstract
This work presents a simulation study of a ferroelectric field effect transistor (FeFET), which leverages a metal interlayer to achieve a multilevel operation thanks to the interplay between the ferroelectric polarization and the charge stored in the interlayer. We show that the metal interlayer can effectively stabilize the ferroelectric polarization even for a negligible charge trapping in the dielectric stack and, moreover, enable a multilevel operation even for a uniform ferroelectric polarization.
DOI
10.1109/edtm61175.2025.11040846
Archivio
https://hdl.handle.net/11390/1310884
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-105010823377
Diritti
open access
license:creative commons
license uri:http://creativecommons.org/licenses/by/4.0/
Soggetti
  • charge trapping

  • Ferroelectric field-e...

  • metal interlayer

  • TCAD simulation

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