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Electron Injection in the Gate Oxide of MOS Structures at Liquid Nitrogen Temperature: Measurement and Simulation
FISCHER B
•
GHETTI A
•
SELMI, Luca
•
SANGIORGI, Enrico
1996
journal article
Periodico
JOURNAL DE PHYSIQUE IV
Archivio
http://hdl.handle.net/11390/687581
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-0030122730
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