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500 °c bipolar SiC linear voltage regulator

Kargarrazi, Saleh
•
Lanni, Luigia
•
Rusu, Ana
altro
SAGGINI, Stefano
2015
  • journal article

Periodico
IEEE TRANSACTIONS ON ELECTRON DEVICES
Abstract
In this paper, we demonstrate a fully integrated linear voltage regulator in silicon carbide NPN bipolar transistor technology, operational from 25 degrees C up to 500 degrees C. For 15-mA load current, this regulator provides a stable output voltage with <2% variation in the temperature range 25 degrees C-500 degrees C. For both line and load regulations, degradation of 50% from 25 degrees C to 300 degrees C and improvement of 50% from 300 degrees C to 500 degrees C are observed. The transient response measurements of the regulator show robust behavior in the temperature range 25 degrees C-500 degrees C.
DOI
10.1109/TED.2015.2417097
WOS
WOS:000355405800040
Archivio
http://hdl.handle.net/11390/1102642
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85027944456
Diritti
closed access
Soggetti
  • Bipolar junction tran...

  • high-temperature IC

  • regulator

  • Silicon carbide (SiC)...

  • Electrical and Electr...

  • Electronic, Optical a...

Scopus© citazioni
27
Data di acquisizione
Jun 7, 2022
Vedi dettagli
Web of Science© citazioni
25
Data di acquisizione
Mar 27, 2024
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