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Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs

MENOZZI R
•
RICCO B.
•
SELMI, Luca
•
SANGIORGI, Enrico
1991
  • journal article

Periodico
IEEE TRANSACTIONS ON ELECTRON DEVICES
Abstract
An experimental investigation on the interaction between different parasitic devices in CMOS ICs from the point of view of latchup triggering is outlined. The study, carried out by means of ad hoc test structures, shows that this interaction: (a) can lead to significant increase in latchup susceptibility; (b) can involve devices very distant from one another; and (c) is not always suppressed by guard ring protections. The main features of the experimental results are discussed and explained
DOI
10.1109/16.119047
WOS
WOS:A1991FW96400047
Archivio
http://hdl.handle.net/11390/853382
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-0026204012
Diritti
closed access
Scopus© citazioni
8
Data di acquisizione
Jun 14, 2022
Vedi dettagli
Web of Science© citazioni
6
Data di acquisizione
Mar 17, 2024
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