We study the dynamical behavior of doped electronic systems subject to a global ramp of the repulsive Hubbard interaction. We start with formulating a real-time generalization of the fluctuation-exchange approximation. Implementing this numerically, we investigate the weak-coupling regime of the Hubbard model both in the electron-doped and hole-doped regimes. The results show that both local and nonlocal (momentum-dependent) observables evolve toward a thermal state, although the temperature of the final state depends on the ramp duration and the band filling. We further reveal a momentum-dependent relaxation rate of the distribution function in doped systems and trace back its physical origin to the anisotropic self-energies in the momentum space.
