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Influence of N-cluster states on the gyromagnetic factor of electrons in GaAs(1-x)N(x)

PETTINARI G
•
MASIA F
•
POLIMENI A
altro
FRANCIOSI, ALFONSO
2006
  • journal article

Periodico
PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS
Abstract
The effective gyromagnetic factor of electrons, ge*, has been determined by Zeeman splitting measurements in a large number of Ga As1-x Nx GaAs (x<0.7%) samples. Upon N incorporation, ge* shows first a sign reversal with respect to that of GaAs, then increases abruptly for a nitrogen concentration of order of 0.04%, and finally displays a nonmonotonic dependence on composition for higher x values. This behavior is well reproduced by a modified kp model taking into account a nonmonotonic loss of Γ character of the conduction band minimum due to multiple crossings between the redshifting conduction band edge and N -cluster states.
DOI
10.1103/PhysRevB.74.245202
Archivio
http://hdl.handle.net/11368/1694177
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-33845328054
http://prb.aps.org/abstract/PRB/v74/i24/e245202
Diritti
metadata only access
Soggetti
  • semiconductor

  • impuritie

  • nitrides

Web of Science© citazioni
43
Data di acquisizione
Mar 24, 2024
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