This paper aims at comparing Pseudospectral method and Discrete Geometric approach for modelling quantization effects
in nanoscale devices. To this purpose, we implemented a simulation tool, based on both the methods, to solving self-consistent
Schr ̈
odinger-Poisson coupled problem for a 2D electron carrier confinement according to Effective Mass Approximation model
(suitable for FinFETs and nanowire FETs).
