Influence of interface traps on ferroelectric NC-FETs

In this letter, we present an intuitive theoretical framework to investigate the influence of interface traps in NC-FETs, operated either as steep-slope or as g m -boosted devices. Our analysis, validated by numerical simulations, shows that the sub-threshold swing can be either improved or degraded by the presence of defects, and that the threshold voltage can be reduced or increased depending on the design of the NC-FET.