High resolution transmission electron microscopy (TEM), high angle annular dark field atomic imaging and energy-dispersive spectroscopy (EDS) studies were performed on pseudomorphic ZnSe/GaAs(001) heterostructures grown using the two different interface fabrication procedures that produce epilayers with minimum native defect densities (below 10 4 cm-2). Despite the apparent differences in the two procedures our TEM and EDS studies detected the formation of similarly Se rich interfaces in both cases.
