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Charge Buildup and Spatial Distribution of Interface Traps in 65-nm pMOSFETs Irradiated to Ultrahigh Doses

Bonaldo S.
•
Gerardin S.
•
Jin X.
altro
Fleetwood D. M.
2019
  • journal article

Periodico
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
DOI
10.1109/TNS.2019.2903020
WOS
WOS:000476782600029
Archivio
http://hdl.handle.net/11390/1158719
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85069452902
Diritti
metadata only access
Soggetti
  • 65-nm CMOS

  • charge pumping (CP)

  • interface trap

  • lightly doped drain (...

  • MOSFET

  • radiation-induced sho...

  • series resistance

  • spacer

  • threshold voltage shi...

  • total dose effect

  • ultrahigh doses

Scopus© citazioni
15
Data di acquisizione
Jun 14, 2022
Vedi dettagli
Web of Science© citazioni
26
Data di acquisizione
Mar 23, 2024
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