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Mobility Extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness

SCHMIDT M
•
LEMME M. C
•
GOTTLOB H. D. B
altro
SELMI, Luca
2009
  • conference object

Abstract
In this abstract, the impact of series resistance on mobility extraction in conventional and recessed-gate ultra thin body (UTB) n-MOSFETs is investigated. High series resistance leads to an overestimation of the internal source/drain voltage and influences the measurement of the gate to channel capacitance. A specific MOSFET design that includes additional channel contacts and recessed gate technology are used to successfully extract mobility down to 0.9 nm silicon film thickness (4 atomic layers). Quantum mechanical effects are found to shift the threshold voltage and degrade mobility at these extreme scaling limits.
DOI
10.1109/ULIS.2009.4897531
WOS
WOS:000266761300007
Archivio
http://hdl.handle.net/11390/881712
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-67650676834
Diritti
closed access
Scopus© citazioni
1
Data di acquisizione
Jun 14, 2022
Vedi dettagli
Web of Science© citazioni
1
Data di acquisizione
Mar 23, 2024
Visualizzazioni
3
Data di acquisizione
Apr 19, 2024
Vedi dettagli
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