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A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance

Hahn, H.
•
Deshpande, V.
•
Caruso, E.
altro
Czornomaz, L.
2017
  • conference object

DOI
10.1109/IEDM.2017.8268410
WOS
WOS:000424868900104
Archivio
http://hdl.handle.net/11390/1124243
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85045207796
Diritti
metadata only access
Scopus© citazioni
13
Data di acquisizione
Jun 14, 2022
Vedi dettagli
Visualizzazioni
2
Data di acquisizione
Apr 19, 2024
Vedi dettagli
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