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Simulation of Double-Gate nano-MOSFETs with the Multi-subband Monte Carlo Method

LUCCI, Luca
•
PALESTRI, Pierpaolo
•
ESSENI, David
•
SELMI, Luca
2006
  • conference object

Abstract
A recently developed self-consistent Monte-Carlo (MC) simulator of confined electron's transport in the inversion layer of nano-MOSFETs is used to analyze three nano-scale ultra-thin body (UTB) SOI MOSFETs. The effect of the subband structure and carrier degeneracy as well as the relative importance of different scattering mechanisms is discussed.
Archivio
http://hdl.handle.net/11390/882865
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closed access
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5
Data di acquisizione
Apr 19, 2024
Vedi dettagli
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