In this paper, an analytical band-to-band tunneling model is proposed, validated by means of
drift-diffusion simulation and comparison with experimental data, implemented in Verilog-A, and
finally proven with SPICE simulator through simulation of circuits featuring tunneling diodes. The
p-n junction current calculation starts from a non-local Band-to-Band tunneling theory including the
electron-phonon interaction and therefore it is particularly suited for indirect semiconductor materials
such as silicon- or germanium-based interband tunneling devices.
