The technological success of phase-change materials in the field of data storage and functional
systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently,
superlattice structures have been demonstrated to dramatically improve the optical and electrical
performances of these chalcogenide based phase-change materials. In this perspective, unravelling
the atomistic structure that originates the improvements in switching time and switching energy is
paramount in order to design nanoscale structures with even enhanced functional properties. This
study reveals a high- resolution atomistic insight of the [GeTe/Sb2Te3] interfacial structure by means of
Extended X-Ray Absorption Fine Structure spectroscopy and Transmission Electron Microscopy. Based
on our results we propose a consistent novel structure for this kind of chalcogenide superlattices.
