In this paper, we review recent developments of
the Monte Carlo approach to the simulation of semi-classical
carrier transport in nano-MOSFETs, with particular focus on the
inclusion of quantum-mechanical effects in the simulation (using
either the Multi-Subband approach or quantum corrections to
the electrostatic potential) and on the numerical stability issues
related to the coupling of the transport with the Poisson equation.
Selected applications are presented, including the analysis of
quasi-ballistic transport, the determination of the RF characteristics
of deca-nanometric MOSFETs, and the study of nonconventional
device structures and channel materials.
