This paper presents the theory, implementation and application
of a new quantum transport, NEGF based modelling
approach employing a full-band Empirical Pseudopotential
(EP) Hamiltonian. The use of a hybrid real-space/plane-waves
basis results in a remarkable reduction of the computational
burden compared to a full plane waves basis, which allowed us
to obtain complete, self-consistent simulations for both FETs
and Tunnel FETs in Si or in Ge, and with geometrical features
in line with forthcoming CMOS technologies
