Simulation Study of Coulomb Mobility in Strained Silicon

DRIUSSI, Francesco

•

ESSENI, David

2009

journal article

Periodico

IEEE TRANSACTIONS ON ELECTRON DEVICES

DOI

10.1109/TED.2009.2026394

WOS

WOS:000269154500032

Archivio

http://hdl.handle.net/11390/705850

info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-69549091580

Diritti

closed access

Scopus© citazioni

6

Data di acquisizione
Jun 7, 2022

Web of Science© citazioni

5

Data di acquisizione
Mar 27, 2024