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Electrical characteristics of silicon pixel detectors

I. GORELOV
•
G. GORFINE
•
M. HOEFERKAMP
altro
SANTI, Lorenzo Gianni
2002
  • journal article

Periodico
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT
Abstract
Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.
DOI
10.1016/S0168-9002(02)00557-0
WOS
WOS:000177920500020
Archivio
http://hdl.handle.net/11390/878854
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-0037151459
Diritti
closed access
Soggetti
  • Pixel

  • Semiconductor

  • Silicon

  • Tracking

Scopus© citazioni
27
Data di acquisizione
Jun 2, 2022
Vedi dettagli
Web of Science© citazioni
26
Data di acquisizione
Feb 2, 2024
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