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Silicon Carbide membranes as substrate for Synchrotron measurements

Matteo Altissimo
•
A. Iacopi
•
L. Hold
altro
Pietro Parisse and Alessandra Gianoncelli
2018
  • journal article

Periodico
JOURNAL OF INSTRUMENTATION
Abstract
Silicon Nitride (SiN) membranes have long been the substrate of choice for many different synchrotron techniques at very different wavelengths (from IR to hard X-rays), due to their ease of production, relative robustness even in films <200 nm in thickness, and compatibility with standard microfabrication techniques. Here we present a set of data referring to custom-made Silicon Carbide (SiC) windows. We measured SiC surface roughness, mechanical robustness and membrane transmission both at IR and soft X-rays wavelengths, and compared the data with standard Si3N4, acquired in the same conditions. Further, we grew HEK293T cells both on Si3N4 and SiC membranes, and analysed them with IR and soft X-ray microscopy. Our data demonstrates how SiC is an excellent choice as membrane material for synchrotron measurements, since it shows higher transmission and higher robustness as compared to Si3N4 of the same thickness, and an improved compatibility for cell culturing, allowing to postulate their use also for bio-oriented research.
DOI
10.1088/1748-0221/13/05/C05017
WOS
WOS:000432930000003
Archivio
http://hdl.handle.net/11368/2931744
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85048137317
http://iopscience.iop.org/article/10.1088/1748-0221/13/05/C05017/meta
Diritti
closed access
license:copyright editore
FVG url
https://arts.units.it/request-item?handle=11368/2931744
Soggetti
  • Silicon Nitride

  • SiN

  • synchrotron, cells

Scopus© citazioni
3
Data di acquisizione
Jun 7, 2022
Vedi dettagli
Web of Science© citazioni
3
Data di acquisizione
Mar 27, 2024
Visualizzazioni
5
Data di acquisizione
Apr 19, 2024
Vedi dettagli
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