In this paper, we investigate electron transport and electron scattering in the insulators of the Graphene Base Transistor (GBT) by means of a Monte Carlo transport model. We focus on electron backscattering in the base-collector insulator as the possible root cause of the large experimental base current and small measured common-base current gain (αF) of GBTs. Different GBT structures have been simulated and the impact of the scattering parameters on the base current is analyzed. Simulated backscattering-limited αF values are found to be much higher than available experimental data, suggesting that state-of-the-art technology is still far from being optimized. However, those simulated αF values can be low enough to limit the maximum achievable GBT performance.
