This paper presents a new model for the surface roughness
(SR) limited mobility (μSR). The model is suitable for bulk,
for ultra thin body (UTB) and for Hetero-Structure Quantum
Well (HS-QW) MOSFETs. Comparison with experimental
mobility for Si bulk MOSFETs shows that a good agreement
with measured mobility can be obtained with a r.m.s. value
of the SR spectrum close to several AFM and TEM measurements.
For III-V MOSFETs with small well thickness the
proposed model shows a weaker mobility degradation with
respect to the Tw6 behavior.
