Modeling of High Total Ionizing Dose (TID) Effects for Enclosed Layout Transistors in 65 nm Bulk CMOS

Aristeidis Nikolaou

•

Matthias Bucher

•

Nikolaos Makris

altro

Federico Faccio

2018

conference object

Archivio

http://hdl.handle.net/11390/1139422

info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85059633536

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closed access

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1

Data di acquisizione
Apr 19, 2024