We present a simulation study of the dependence
of the Coulomb limited mobility on the biaxial strain in -type
(001) Si MOSFETs. By using a model based on the Momentum
Relaxation Time (MRT) approximation, we first reproduce fairly
well a wide set of published experiments, then we use our
simulations to explain the dependence on the strain of the
mobility limited by interface states and substrate impurities.
Differently from the experiments, the MRT approach allows us
to study the different mobility components without resorting to
the Matthiessen’s rule, which can lead to large errors in the
extrated mobility. Simulations indicate that the strain reduces
the interface state limited mobility, while it leaves essentially
unchanged the substrate impurity limited mobility.
