Measurement of Johnson noise induced by p-stops in silicon microstrip detectors

We report on noise measurements performed on the n-side of double-sided, AC-coupled, punch-through biased silicon strip detectors. The noise has been measured over a wide range of peaking times and bias voltages, allowing the disentanglement of two excess noise terms, one related to the p-stops surrounding the strips and the other related to the electron accumulation layer at the Si/SiO interface.