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Ab-initio electronic structure calculation of the InAs multiple quantum wells in bulk GaAs

Nacir Tit
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PERESSI, MARIA
1996
  • journal article

Periodico
APPLIED SURFACE SCIENCE
DOI
10.1016/S0169-4332(96)00220-6
WOS
WOS:A1996VR57300105
Archivio
http://hdl.handle.net/11368/2562891
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-0030233541
Diritti
metadata only access
Soggetti
  • semiconductor

  • heterojunction

  • band offset

Web of Science© citazioni
1
Data di acquisizione
Mar 11, 2024
Visualizzazioni
2
Data di acquisizione
Apr 19, 2024
Vedi dettagli
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