In this paper, we present simulations of some of the most relevant transport properties of the inversion layer of ultra-thin film
SOI devices with a self-consistent Monte-Carlo transport code for a confined electron gas. We show that size induced quantization
not only decreases the low-field mobility (as experimentally found in [Uchida K, Koga J, Ohba R, Numata T, Takagi S. Experimental
eidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance and threshold voltage of ultrathin body
SOI MOSFETs, IEEE IEDM Tech Dig 2001;633–6; Esseni D, Mastrapasqua M, Celler GK, Fiegna C, Selmi L, Sangiorgi E. Low
field electron and hole mobility of SOI transistors fabricated on ultra-thin silicon films for deep sub-micron technology application.
IEEE Trans Electron Dev 2001;48(12):2842–50; Esseni D, Mastrapasqua M, Celler GK, Fiegna C, Selmi L, Sangiorgi E, An experimental
study of mobility enhancement in ultra-thin SOI transistors operated in double-gate mode, IEEE Trans Electron Dev
2003;50(3):802–8. [1–3]]), but also the electron saturation velocity and the carrier heating depend on the subband structure, and thus
on the silicon film thickness.
