In this paper, we analyze the experimental SILC statistical
data at low stress reported in [5]. To this purpose we developed
an analytical physical model to study the statistical distribution of the
TAT current due to single and multiple traps in the gate oxide of a
Floating Gate memory cell. We modeled also the generation dynamics
of conductive percolation paths due to more traps and we simulated
the SILC statistical distribution in the memory cell. This study points
out the differences in the statistical behavior of the TAT current due to
defects formed by single and multiple traps.
