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Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects

ESSENI, David
•
M. G. Pala
•
REVELANT, Alberto
altro
H. G. Xing
2014
  • journal article

Periodico
ECS TRANSACTIONS
Abstract
Tunnel FETs are perceived as promising emerging devices to improve the energy efficiency of CMOS integrated circuits. This paper presents results and discussions about some selected topics concerning the working principles and design options of Tunnel FETs, which we believe will play an important role in the development and optimization of these transistors in the near term future.
DOI
10.1149/06406.0581ecst
WOS
WOS:000356773400057
Archivio
http://hdl.handle.net/11390/1007746
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84921282512
Diritti
closed access
Scopus© citazioni
0
Data di acquisizione
Jun 2, 2022
Vedi dettagli
Web of Science© citazioni
0
Data di acquisizione
Mar 24, 2024
Visualizzazioni
5
Data di acquisizione
Apr 19, 2024
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