Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs
ESSENI, David
•
ABRAMO, Antonio
•
SELMI, Luca
•
SANGIORGI, Enrico
2003
Periodico
IEEE TRANSACTIONS ON ELECTRON DEVICES
DOI
WOS
Archivio
Diritti
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