We propose a new and simple way to account
for tunneling in Schottky barrier (SB) contacts by using
the effective potential approach. The method has been
validated in 1D cases by comparison with the WK B
method and then implemented in a Multi-Subband Monte
Carlo simulator. Results for metallic Source/Drain (S/D)
MOSFETs with Schottky barrier show that very low
Schottky barrier heights (SBH) are needed to provide a
current drive comparable to the one of doped-S/D devices.
We also observe that SB-MOSFETs are working closer to
the ballistic limit than their doped-S/D counterparts
although the transport bottleneck is the SB contact.
