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Vertical GaSb/AlSb/InAs Heterojunction Tunnel-FETs: A Full Quantum Study
Grillet C
•
Cresti A
•
Pala M
2018
journal article
Periodico
IEEE TRANSACTIONS ON ELECTRON DEVICES
DOI
10.1109/TED.2018.2834307
WOS
WOS:000435546700052
Archivio
https://hdl.handle.net/11390/1266759
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85047177531
https://ricerca.unityfvg.it/handle/11390/1266759
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