This paper presents SiGe nanowire tunneling field effect transistors (TFETs) cointegrated with MOSFETs. The process is detailed, and the differences between TFET injection (Band-to-Band Tunneling or BTBT) and MOSFET thermionic injection are outlined. The fabricated TFETs exhibit record ON-current performances at room temperature, three times higher than previous state of the art. Low-temperature measurements are conducted to clarify the device physics. It is shown that subthreshold slope degradation is a result of trap assisted tunneling; careful control of the defect-inducing process steps could lead to slopes lower than 60mV/dec at room temperature, without degradation of ON-state current.
