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Revisiting piezoelectric FETs with sub-thermal swing
H. Wang
•
X. Jiang
•
G. Han
altro
D. Esseni
2017

  • conference object
DOI
10.1109/E3S.2017.8246194
WOS
WOS:000426450900042
Archivio
http://hdl.handle.net/11390/1123807
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85045998996
Diritti
open access
Soggetti

  • field effect transist...

  • piezoelectric device

  • BTBT

  • Boltzmann thermal lim...

  • CMOS transistor

  • MOSFET

  • NC-FET

  • SS

  • TFET

  • band-to-band tunnelin...

  • energy filtering acti...

  • ferroelectric materia...

  • negative capacitance ...

  • piezoelectric FET

  • ubthermal swing

  • ubthreshold swing

  • witching mechanism

  • temperature 293 K to ...

  • tunnel FET

  • ultralow power electr...

  • Analytical model

  • Field effect transist...

  • Logic gate

  • Metal

  • Numerical simulation

  • Strain

  • Stress
Scopus© citazioni
0
Data di acquisizione
Jun 7, 2022
Vedi dettagli
Visualizzazioni
6
Data di acquisizione
Apr 19, 2024
Vedi dettagli
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