A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors

In this paper we use a Multi-Subband-Monte-Carlo model to study the transport in nMOSFETs featuring strained silicon channels. It is shown that state-of-the-art modeling of the mobility in n-type inversion layers cannot reproduce the mobility enhancements measured in Si devices with either uniaxial or biaxial strain. Possible reasons for this limitation are analyzed in detail.