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TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections

Carapezzi, Stefania
•
Caruso, Enrico
•
Gnudi, Antonio
altro
Gnani, Elena
2017
  • journal article

Periodico
IEEE TRANSACTIONS ON ELECTRON DEVICES
DOI
10.1109/TED.2017.2759420
WOS
WOS:000417727500011
Archivio
http://hdl.handle.net/11390/1124241
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85032230996
Diritti
metadata only access
Soggetti
  • ballistic transport

  • double-gate (DG) FET

  • III-V semiconductor

  • mobility

  • MOSFET

  • Electronic, Optical a...

  • Electrical and Electr...

Scopus© citazioni
4
Data di acquisizione
Jun 7, 2022
Vedi dettagli
Web of Science© citazioni
4
Data di acquisizione
Mar 27, 2024
Visualizzazioni
3
Data di acquisizione
Apr 19, 2024
Vedi dettagli
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