PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE
Abstract
We present experimental data on analog device performance
of p-type planar and gate all around (GAA) nanowire
(NW) Tunnel-FETs (TFETs). 10nm diameter GAA-NW-TFETs
reach a maximum transconductance efficiency of 12.7V
−1
which is close to values obtained from simulations. A significant
improvement of the analog performance by enhancing the electrostatics
from planar TFETs to GAA-NW-TFETs with diameter of
20nm and 10nm is demonstrated. A maximum transconductance
of 122 μS/μm and on-current up to 23 μA/μm at a gate
overdrive of Vgt = Vd = −1V were achieved for the GAANW-
TFETs. Furthermore a good output current-saturation is
observed leading to high intrinsic gain up to 217 which is even
higher than in 20nm FinFETs.
