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Doping of epitaxial graphene by direct incorporation of nickel adatoms

Carnevali, Virginia
•
Patera, Laerte L
•
Prandini, Gianluca
altro
Africh, Cristina
2019
  • journal article

Periodico
NANOSCALE
Abstract
Direct incorporation of Ni adatoms during graphene growth on Ni(111) is evidenced by scanning tunneling microscopy. The structure and energetics of the observed defects is thoroughly characterized at the atomic level on the basis of density functional theory calculations. Our results show the feasibility of a simple scalable method, which could be potentially used for the realization of macroscopic practical devices, to dope graphene with a transition metal. The method exploits the kinetics of the growth process for the incorporation of Ni adatoms in the graphene network.
DOI
10.1039/c9nr01072f
WOS
WOS:000470697800022
Archivio
http://hdl.handle.net/11368/2944336
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85066620560
https://pubs.rsc.org/en/content/articlelanding/2019/nr/c9nr01072f
Diritti
open access
license:copyright editore
license:digital rights management non definito
license:digital rights management non definito
license:copyright editore
FVG url
https://arts.units.it/request-item?handle=11368/2944336
Soggetti
  • graphene

  • defect

  • Ni doping

  • scanning tunneling mi...

  • density functional th...

Web of Science© citazioni
20
Data di acquisizione
Mar 22, 2024
Visualizzazioni
3
Data di acquisizione
Apr 19, 2024
Vedi dettagli
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