We investigate the effect of interface states at the
channel/insulator interface of III-V MOSFETs by means of
accurate Schr ̀ˆodinger-Poisson and Multi-subband Monte Carlo
simulations. Traps in the conduction band are found to be the
main responsible of the Fermi level pinning observed in the
experiments and impact the mobility measurements, but have a limited influence on the current drive of short channel devices.
