The validity of a previously published extraction
technique for the limiting carrier velocity responsible for current
saturation in nano-MOSFETs is carefully re-examined by means
of accurate Multi Subband Monte Carlo transport simulations.
By comparing the extracted limiting velocity to the calculated
injection velocity, we identify the main sources of error of the
extraction method. Then, we propose a new extraction procedure
and extensively validate it. Our simulations and experimental
results reconcile the values and trends of the extracted limiting
velocity with the expectations stemming from quasi ballistic
transport theory.
