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Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies

Esseni D.
•
Fontanini R.
•
Lizzit D.
altro
Loghi M.
2021
  • conference object

Abstract
The technological exploitation of ferroelectricity in CMOS electron devices offers new design opportunities, but also significant challenges from an integration, optimization and modelling perspective. We here revisit the working principle and the modelling of some novel ferroelectric based devices, with an emphasis on energy efficiency and on applications to new computational paradigms.
DOI
10.1109/EDTM50988.2021.9420848
WOS
WOS:000675595800034
Archivio
http://hdl.handle.net/11390/1206804
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85106531111
Diritti
open access
Soggetti
  • Ferroelectric FET

  • Ferroelectric Tunneli...

  • Negative Capacitance

  • Neuromorphic Computin...

Scopus© citazioni
0
Data di acquisizione
Jun 14, 2022
Vedi dettagli
Web of Science© citazioni
0
Data di acquisizione
Mar 2, 2024
Visualizzazioni
3
Data di acquisizione
Apr 19, 2024
Vedi dettagli
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