We present a simulation study addressing
the physics and design of ferroelectric MOSFETs and,
in particular, we argue that a retrograde channel doping
profile may help obtain a subthreshold swing well below
60mV/dec. Our analysis suggests that ferroelectric
MOSFETs should be operated at gate voltages smaller
than those triggering the hysteretic behavior, and have
the potential to realize on current to off current ratios
of 106 with a voltage swing as small as 0.2V , which is the
ultimate goal for small slope transistors.
