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Fundamental Role of the H-Bond Interaction in the Dissociation of NH_{3} on Si(001)-(2×1)

Mauro Satta
•
Roberto Flammini
•
Andrea Goldoni
altro
Rosanna Larciprete
2012
  • journal article

Periodico
PHYSICAL REVIEW LETTERS
Abstract
Further insight into the dissociative adsorption of NH3 on Si(001) has been obtained using a combined computational and experimental approach. A novel route leading to the dissociation of the chemisorbed NH3 is proposed, based on H-bonding interactions between the gas phase and the chemisorbed NH3 molecules. Our model, complemented by synchrotron radiation photoelectron spectroscopy measurements, demonstrates that the low temperature dissociation of molecular chemisorbed NH3 is driven by the continuous flux of ammonia molecules from the gas phase.
DOI
10.1103/PhysRevLett.109.036102
WOS
WOS:000306604700010
Archivio
http://hdl.handle.net/11368/2632478
info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84864233705
http://prl.aps.org/abstract/PRL/v109/i3/e036102
Diritti
metadata only access
Soggetti
  • ammonia

  • Dissociation

  • Silicon surface

Web of Science© citazioni
9
Data di acquisizione
Mar 20, 2024
Visualizzazioni
5
Data di acquisizione
Apr 19, 2024
Vedi dettagli
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