In this work a non-local band-to-band tunnelling model has been successfully implemented into a fullband
Monte Carlo simulator and applied to Tunnel-FET devices. No stability or statistical noise problems
were encountered in spite of particle weights ranging over many orders of magnitude (due to vastly different
generation rates at different positions inside the device and biases) so that Tunnel-FET I–V curves
could be traced over the whole on–off range. Different approaches for the choice of the tunnelling path
have been compared and relevant differences are observed in both the current levels and the spatial distribution
of the generated carriers.
