One of the promising ways to functionalize graphene is incorporation of heteroatoms in carbon sp2 lattice, as it is proven to be an efficient and versatile method for controllably tuning chemistry of graphene. We present unique, contamination-free method for selectively doping graphene with B dopants, which are incorporated in layer from a reservoir created in the bulk of Ni(111) single crystal, during standard CVD growth process, leading to clean, versatile and efficient method for creating B-doped graphene. We combine experimental (STM, XPS) and theoretical (DFT, simulated STM) studies to understand structural and chemical properties of substitutional B dopants. Along with previously reported substitutional B in fcc sites, we have observed, for the first time, two more defects, namely substitutional B in top sites and interstitial B in octahedral subsurface sites. Extensive STM investigations confirm presence of low and high concentration regions of B dopants in as-prepared B-doped graphene, indicating non-uniform boron incorporation. Among two substitutional sites, no preference is observed in low-concentration B-doped regions, whereas in high B concentration regions, one of the sublattices is preferred for incorporation, along with alignment of defects. This generates an asymmetric sublattice doping in as-grown B-doped graphene, which is theoretically predicted to result in notable band gap.
